HSBD180 Specs and Replacement
Type Designator: HSBD180
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
HSBD180 Substitution
- BJT ⓘ Cross-Reference Search
HSBD180 datasheet
PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD180 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD178 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD179 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
Detailed specifications: HSBD138, HSBD139, HSBD140, HSBD175, HSBD176, HSBD177, HSBD178, HSBD179, MPSA42, HSBD233, HSBD234, HSBD236, HSBD237, HSBD238, HSBD375, HSBD376, HSBD377
Keywords - HSBD180 pdf specs
HSBD180 cross reference
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