HSBD379 Specs and Replacement
Type Designator: HSBD379
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
HSBD379 Substitution
- BJT ⓘ Cross-Reference Search
HSBD379 datasheet
Detailed specifications: HSBD234, HSBD236, HSBD237, HSBD238, HSBD375, HSBD376, HSBD377, HSBD378, A42, HSBD380, HSBD433, HSBD434, HSBD435, HSBD436, HSBD437, HSBD438, HSBD439
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