HSBD433 Specs and Replacement
Type Designator: HSBD433
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 22 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
HSBD433 Substitution
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HSBD433 datasheet
PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD438 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25 ... See More ⇒
Detailed specifications: HSBD237, HSBD238, HSBD375, HSBD376, HSBD377, HSBD378, HSBD379, HSBD380, BD333, HSBD434, HSBD435, HSBD436, HSBD437, HSBD438, HSBD439, HSBD440, HSBD441
Keywords - HSBD433 pdf specs
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