H2655S Specs and Replacement
Type Designator: H2655S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO92
H2655S Substitution
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H2655S datasheet
NP N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2655S APPLICATIONS power amplifier Applications, power Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissi... See More ⇒
Detailed specifications: H2222A, H227, H2274, H2328S, H2347, H2369, H237, H238, 2SC1815, H2717, H2907A, H3192, H3198, H3200, H3202, H3203, H327
Keywords - H2655S pdf specs
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History: 2SC2757Y | BDT52 | H327
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