H421 Specs and Replacement
Type Designator: H421
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.83 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
H421 Substitution
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H421 datasheet
FastIRFET IRFH4210DPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.10 (@ VGS = 10V) m (@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25 C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDS(ON) (... See More ⇒
FastIRFET IRFH4213DPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.35 (@ VGS = 10V) m (@ VGS = 4.5V) 1.90 Qg (typical) 25 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25 C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDSon (... See More ⇒
FastIRFET IRFH4213PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.35 (@ VGS = 10V) m (@ VGS = 4.5V) 1.90 Qg (typical) 26 nC ID 204 A (@TC (Bottom) = 25 C) PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and ... See More ⇒
Detailed specifications: H368, H369, H370, H380TM, H3904, H3906, H400S, H420, 2SC945, H422, H423, H5342, H5401, H546, H547, H548, H549
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