H5401 Specs and Replacement
Type Designator: H5401
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
H5401 Substitution
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H5401 datasheet
P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5401 AMPLIFIER TRANSISTOR Collector-Emitter Voltage Vceo=150V. Collector Dissipation Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 ... See More ⇒
Detailed specifications: H3904, H3906, H400S, H420, H421, H422, H423, H5342, 2SC2655, H546, H547, H548, H549, H5551, H556, H557, H558
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