H558 Datasheet, Equivalent, Cross Reference Search
Type Designator: H558
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150(TYP) MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92
H558 Transistor Equivalent Substitute - Cross-Reference Search
H558 Datasheet (PDF)
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h558.pdf
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P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H558 APPLICATIONS SWITCHING AND AMPLIFIER ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .