H558 Specs and Replacement

Type Designator: H558

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 typ MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 110

Noise Figure, dB: -

Package: TO92

 H558 Substitution

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H558 datasheet

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H558

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Detailed specifications: H5401, H546, H547, H548, H549, H5551, H556, H557, D965, H5609, H5610, H562, H639, H643, H732TM, H733, H789A

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