All Transistors. H5610 Datasheet

 

H5610 Datasheet and Replacement


   Type Designator: H5610
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 360(TYP) MHz
   Collector Capacitance (Cc): 38 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
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H5610 Datasheet (PDF)

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H5610

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5610 APPLICATIONS AUDIO AMPLIFICATION ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BFT57DCSM | 2N1988 | 2S142 | PZTA92T1G | L9013SLT1G | SMMBT6521LT1G | IMH8AFRA

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