All Transistors. H5610 Datasheet

 

H5610 Datasheet and Replacement


   Type Designator: H5610
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 360(TYP) MHz
   Collector Capacitance (Cc): 38 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
 

 H5610 Substitution

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H5610 Datasheet (PDF)

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H5610

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5610 APPLICATIONS AUDIO AMPLIFICATION ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

Datasheet: H547 , H548 , H549 , H5551 , H556 , H557 , H558 , H5609 , 2SD669 , H562 , H639 , H643 , H732TM , H733 , H789A , H8050S , H817 .

History: MP4354 | 2SB1024 | BD779 | P203E | PBLS1504V | MJD210 | RN2972CT

Keywords - H5610 transistor datasheet

 H5610 cross reference
 H5610 equivalent finder
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