H5610 Specs and Replacement

Type Designator: H5610

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 360 typ MHz

Collector Capacitance (Cc): 38 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

 H5610 Substitution

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H5610 datasheet

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H5610

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Detailed specifications: H547, H548, H549, H5551, H556, H557, H558, H5609, TIP2955, H562, H639, H643, H732TM, H733, H789A, H8050S, H817

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