All Transistors. H930 Datasheet

 

H930 Datasheet and Replacement


   Type Designator: H930
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 170 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

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H930 Datasheet (PDF)

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H930

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H930 APPLICATIONS FM RF ampmixeroscconverterand IF amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissip

Datasheet: H817 , H8550S , H9012 , H9013 , H9015 , H9018 , H926 , H928S , 2SC5198 , H933 , H984 , HA05 , HA06 , HA1695 , HA1943 , HA1962 , HA42 .

History: 2N1837 | BCW19 | 2N778 | ST2SB1188U | BCW12L | BUV48C | MP1537A

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