HA05 Datasheet and Replacement

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA05 APPLICATIONS General Purpose Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS : 30V DFN5*6 DFN3*3 High ruggedness ID : 20A Low RDS(ON) (Typ 6.8m)@VGS=4.5V 1 8 1 8 RDS(ON) : 6.8m@VGS=4.5V (Typ 5.7m)@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m@VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D A

SW056R68E7TN-channel Enhanced mode DFN5*6 MOSFETFeaturesBVDSS : 68VDFN5*6 High ruggedness Low RDS(ON) (Typ 5.5m)@VGS=10V ID : 100A18 Low Gate Charge (Typ 99nC)2 7RDS(ON) : 5.5m Improved dv/dt Capability 635 100% Avalanche Tested 4D Application:Synchronous Rectification,Li Battery Protect Board, InverterG4. Gate 5,6,7,8.Drain 1,2,

SW055R03VTN-channel Enhanced mode DFN3*3/DFN5*6 MOSFETFeaturesBVDSS : 30VDFN5*6DFN3*3 High ruggednessID : 20A Low RDS(ON) (Typ 6.8m)@VGS=4.5V1 8 1 8RDS(ON) : 6.8m@VGS=4.5V(Typ 5.7m)@VGS=10V2 7 2 7 Low Gate Charge (Typ 25nC) 6 63 35.7m@VGS=10V4 5 54 Improved dv/dt Capability 100% Avalanche TestedD Application:DC-DC Converte