All Transistors. HC8050S Datasheet

 

HC8050S Datasheet and Replacement


   Type Designator: HC8050S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO92
 

 HC8050S Substitution

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HC8050S Datasheet (PDF)

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HC8050S

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8050S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

 8.1. Size:137K  shantou-huashan
 hc8050.pdf pdf_icon

HC8050S

Shantou Huashan Electronic Devices Co.,Ltd. HC8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

Datasheet: HA94 , HB772S , HC1417 , HC4468 , HC5027H , HC5200 , HC5242 , HC8050 , C5198 , HC8550 , HC8550S , HD882S , HD965 , HEB834 , HED880 , HEP31 , HEP31A .

History: 2S013A | HD965 | 2SD2198 | 2N5845 | 2N156 | BD154 | BUL98B

Keywords - HC8050S transistor datasheet

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