HD965 Datasheet and Replacement
Type Designator: HD965
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO92
HD965 Substitution
HD965 Datasheet (PDF)
hd965.pdf

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD965 LOW FREQUENCY AMPLIFIER APPLICATIONS. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation
Datasheet: HC5027H , HC5200 , HC5242 , HC8050 , HC8050S , HC8550 , HC8550S , HD882S , D882 , HEB834 , HED880 , HEP31 , HEP31A , HEP31B , HEP31C , HEP32 , HEP32A .
History: BUL98B | 2N189 | 2N156 | 2N1890S | DTC143TMFHA | NTE2405 | NSD131
Keywords - HD965 transistor datasheet
HD965 cross reference
HD965 equivalent finder
HD965 lookup
HD965 substitution
HD965 replacement
History: BUL98B | 2N189 | 2N156 | 2N1890S | DTC143TMFHA | NTE2405 | NSD131



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