All Transistors. HD965 Datasheet

 

HD965 Datasheet, Equivalent, Cross Reference Search

Type Designator: HD965

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO92

HD965 Transistor Equivalent Substitute - Cross-Reference Search

 

HD965 Datasheet (PDF)

1.1. hd965.pdf Size:260K _shantou-huashan

HD965

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD965 █ LOW FREQUENCY AMPLIFIER APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯⋯⋯⋯⋯⋯⋯

Datasheet: HC5027H , HC5200 , HC5242 , HC8050 , HC8050S , HC8550 , HC8550S , HD882S , S9014 , HEB834 , HED880 , HEP31 , HEP31A , HEP31B , HEP31C , HEP32 , HEP32A .

 


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