HD965 Specs and Replacement

Type Designator: HD965

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO92

 HD965 Substitution

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HD965 datasheet

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HD965

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Detailed specifications: HC5027H, HC5200, HC5242, HC8050, HC8050S, HC8550, HC8550S, HD882S, BC337, HEB834, HED880, HEP31, HEP31A, HEP31B, HEP31C, HEP32, HEP32A

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