HD965 Datasheet, Equivalent, Cross Reference Search
Type Designator: HD965
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO92
HD965 Transistor Equivalent Substitute - Cross-Reference Search
HD965 Datasheet (PDF)
..1. Size:260K shantou-huashan
hd965.pdf
hd965.pdf
N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD965 LOW FREQUENCY AMPLIFIER APPLICATIONS. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
