All Transistors. HEP31B Datasheet

 

HEP31B Datasheet, Equivalent, Cross Reference Search


   Type Designator: HEP31B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220AB

 HEP31B Transistor Equivalent Substitute - Cross-Reference Search

   

HEP31B Datasheet (PDF)

 9.1. Size:64K  shantou-huashan
 hep31-a-b-c.pdf

HEP31B HEP31B

NPN S I L I C O N T R A N S I S T O R HEP31 Series Shantou Huashan Electronic Devices Co.,Ltd. HEP31/HEP31A/HEP31B/HEP31C APPLICATIONS Mediu Power Linear switching Applications. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220AB TstgStorage Temperature -55~150 TjJunction Temperature

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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