HEP31B Specs and Replacement

Type Designator: HEP31B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220AB

 HEP31B Substitution

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HEP31B datasheet

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HEP31B

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Detailed specifications: HC8550, HC8550S, HD882S, HD965, HEB834, HED880, HEP31, HEP31A, 13007, HEP31C, HEP32, HEP32A, HEP32B, HEP32C, HEP41C, HEP42C, HM28S

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