All Transistors. HEP31B Datasheet

 

HEP31B Datasheet and Replacement


   Type Designator: HEP31B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220AB
 

 HEP31B Substitution

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HEP31B Datasheet (PDF)

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HEP31B

NPN S I L I C O N T R A N S I S T O R HEP31 Series Shantou Huashan Electronic Devices Co.,Ltd. HEP31/HEP31A/HEP31B/HEP31C APPLICATIONS Mediu Power Linear switching Applications. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220AB TstgStorage Temperature -55~150 TjJunction Temperature

Datasheet: HC8550 , HC8550S , HD882S , HD965 , HEB834 , HED880 , HEP31 , HEP31A , 2N3906 , HEP31C , HEP32 , HEP32A , HEP32B , HEP32C , HEP41C , HEP42C , HM28S .

History: 2SC3303 | 2N1557A | NR431FF | HEP32 | BLU51 | KTA1695 | 2SC2758U14

Keywords - HEP31B transistor datasheet

 HEP31B cross reference
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