HX128M Specs and Replacement

Type Designator: HX128M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 6.5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 260 typ MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO92S

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HX128M datasheet

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HX128M

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HX128M APPLICATIONS Suitable For Low Voltage Large Current Drivers. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92S Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation... See More ⇒

Detailed specifications: HEP32B, HEP32C, HEP41C, HEP42C, HM28S, HS733, HS945, HX1267, 13003, HX2785, HX3199, HX3904, HX3906, HX789A, SFT1202E, SFT1202TLE, SFT2010

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