2N727 Specs and Replacement
Type Designator: 2N727
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO18
2N727 Substitution
- BJT ⓘ Cross-Reference Search
2N727 datasheet
JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.500 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre... See More ⇒
Detailed specifications: 2N720, 2N720A, 2N721, 2N721A, 2N722, 2N722A, 2N725, 2N726, 2SC5200, 2N728, 2N729, 3CA200A, 2N730, 2N731, 2N734, 2N734A, 2N735
Keywords - 2N727 pdf specs
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History: KT6110V
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