SFT6678M Specs and Replacement

Type Designator: SFT6678M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 650 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO254

 SFT6678M Substitution

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SFT6678M datasheet

 7.1. Size:222K  ssdi

 sft6678.pdf pdf_icon

SFT6678M

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 9.1. Size:117K  ssdi

 sft6661.pdf pdf_icon

SFT6678M

SFF6661/39 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone (562) 404-4474 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 0.86 AMP DESIGNER S DATA SHEET N-CHANNEL MOSFET Part Number / Ordering Information 1/ 90 Volts, 4 SFF6661 /39 ___ Screening 2/ __ = Not Screened TX = TX Level Features TXV = ... See More ⇒

Detailed specifications: SFT2010, SFT2012, SFT2014, SFT3852-59, SFT5001, SFT6284, SFT6287, SFT6678-3, BD135, SFT6678Z, SFT6800, SFT8200, SFT8500, 3CG8550M, T2095, EB203D, ECG127

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