2N729 Specs and Replacement
Type Designator: 2N729
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO18
2N729 Substitution
- BJT ⓘ Cross-Reference Search
2N729 datasheet
JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A, 100V, rDS(ON) = 0.070 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P... See More ⇒
JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 23A, 200V, rDS(ON) = 0.115 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P... See More ⇒
2n7291 2n7293 2n7295 2n7297.pdf ![]()
INCH POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/606B be completed by 28 October 2004. 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N729... See More ⇒
Detailed specifications: 2N721, 2N721A, 2N722, 2N722A, 2N725, 2N726, 2N727, 2N728, BD139, 3CA200A, 2N730, 2N731, 2N734, 2N734A, 2N735, 2N735A, 2N736
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History: 2N726 | BDW21 | 2SCR375P
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