S8050D Specs and Replacement
Type Designator: S8050D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO92
S8050D Substitution
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S8050D datasheet
MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone (818) 701-4933 Fax (818) 701-4939 S8050-D Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating an... See More ⇒
S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper... See More ⇒
Jiangsu Weida Semiconductor Co., Ltd. S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 25 Vdc VCBO Collector-Base Voltage 40 Vdc VEBO Emitter-Base VOltage 5.0 Vdc Collector Current IC 500 mAdc PD Total Device Dissipation T =25 C 0.625 W A Junction Te... See More ⇒
Detailed specifications: SD1018, SD1019-2, SD1019-5, SD4011, SD4013, SD4590, S8050B, S8050C, S9018, S8050G, S8550B, S8550C, S8550D, S8550G, S9011, S9011LT1, S9012G
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