S9011 Specs and Replacement
Type Designator: S9011
SMD Transistor Code: 1T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SOT23
S9011 Substitution
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S9011 datasheet
BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9011 FEATURES Pb Collector Current.(IC= 30mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, AM/FM if amplifier general purpose transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9011 1T SOT-23 MAXIMUM RATING @ Ta=25 unless otherwis... See More ⇒
SS9011 AM Converter, AM/FM IF Amplifier General Purpose Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 30 mA PC Collector Power Dissipatio... See More ⇒
SS9011 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER,AM/FM IF AMPLIFIER TO-92 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 Collector Current IC 30 mw Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature T... See More ⇒
Detailed specifications: S8050B, S8050C, S8050D, S8050G, S8550B, S8550C, S8550D, S8550G, B647, S9011LT1, S9012G, S9012H, S9012I, S9012LT, S9012W, S9013G, S9013H
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