S9011 Datasheet, Equivalent, Cross Reference Search
Type Designator: S9011
SMD Transistor Code: 1T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT23
S9011 Transistor Equivalent Substitute - Cross-Reference Search
S9011 Datasheet (PDF)
s9011.pdf
BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9011 FEATURES Pb Collector Current.(IC= 30mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, AM/FM if amplifier general purpose transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9011 1T SOT-23 MAXIMUM RATING @ Ta=25 unless otherwis
ss9011.pdf
SS9011AM Converter, AM/FM IF AmplifierGeneral Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 30 mAPC Collector Power Dissipatio
ss9011.pdf
SS9011 NPN EPITAXIAL SILICON TRANSISTORAM CONVERTER,AM/FM IF AMPLIFIERTO-92GENERAL PURPOSE TRANSISTORABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 30VEmitter-Base Voltage VEBO 5Collector Current IC 30mwCollector Dissipation PC 400Junction Temperature TJ 150Storage Temperature T
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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