All Transistors. S9016LT1 Datasheet

 

S9016LT1 Datasheet and Replacement


   Type Designator: S9016LT1
   SMD Transistor Code: Y6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23
 

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S9016LT1 Datasheet (PDF)

 ..1. Size:28K  jiangsu
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S9016LT1

JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD SOT-23 Plastic-Encapsulate Transistors S9016LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 200 mW (Tamb=25) 2. 41. 3 Collector current ICM: 0.025 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range Unit: mm TJ, Tstg

 9.1. Size:162K  galaxy
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S9016LT1

BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9016 FEATURES Pb Collector Current.(IC= 25mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9016 Y6 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbo

Datasheet: S9013I , S9014B , S9014C , S9014D , S9015B , S9015C , S9015D , S9016 , 2N3904 , S9018G , S9018H , S9018I , SBC807-16LT1G , SBC807-16LT3G , SBC807-25LT1G , SBC807-25LT3G , SBC807-25WT1G .

History: 2SC513 | BLW71

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