S9016LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: S9016LT1
SMD Transistor Code: Y6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT23
S9016LT1 Transistor Equivalent Substitute - Cross-Reference Search
S9016LT1 Datasheet (PDF)
s9016lt1.pdf
JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD SOT-23 Plastic-Encapsulate Transistors S9016LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 200 mW (Tamb=25) 2. 41. 3 Collector current ICM: 0.025 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range Unit: mm TJ, Tstg
s9016.pdf
BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9016 FEATURES Pb Collector Current.(IC= 25mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9016 Y6 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbo
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: EN708
