S9016LT1 Specs and Replacement

Type Designator: S9016LT1

SMD Transistor Code: Y6

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT23

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S9016LT1 datasheet

 ..1. Size:28K  jiangsu

 s9016lt1.pdf pdf_icon

S9016LT1

JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD SOT-23 Plastic-Encapsulate Transistors S9016LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM 200 mW (Tamb=25 ) 2. 4 1. 3 Collector current ICM 0.025 A Collector-base voltage V(BR)CBO 30 V Operating and storage junction temperature range Unit mm TJ, Tstg... See More ⇒

 9.1. Size:162K  galaxy

 s9016.pdf pdf_icon

S9016LT1

BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9016 FEATURES Pb Collector Current.(IC= 25mA Lead-free Power dissipation.(PC=200mW) APPLICATIONS AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9016 Y6 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbo... See More ⇒

Detailed specifications: S9013I, S9014B, S9014C, S9014D, S9015B, S9015C, S9015D, S9016, BC548, S9018G, S9018H, S9018I, SBC807-16LT1G, SBC807-16LT3G, SBC807-25LT1G, SBC807-25LT3G, SBC807-25WT1G

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