All Transistors. SBC847AWT1G Datasheet

 

SBC847AWT1G Datasheet and Replacement


   Type Designator: SBC847AWT1G
   SMD Transistor Code: 1E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT323
 

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SBC847AWT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
sbc847awt1g.pdf pdf_icon

SBC847AWT1G

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 8.1. Size:1432K  onsemi
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf pdf_icon

SBC847AWT1G

BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements

 8.2. Size:110K  onsemi
bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

SBC847AWT1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 8.3. Size:123K  onsemi
sbc847blt1g.pdf pdf_icon

SBC847AWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconSBC847BLT1G Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V3 We declare that the material of product compliance with RoHS requirements.1MAXIMUM RATINGS2Rating Symbol Value UnitSOT23CollectorEmitter Voltage VCEO 45 Vdc3COLLECT

Datasheet: SBC817-40LT3G , SBC846ALT1G , SBC846BDW1T1G , SBC846BLT1G , SBC846BLT3G , SBC846BPDW1T1G , SBC846BPDW1T2G , SBC846BWT1G , TIP31C , SBC847BDW1T1G , SBC847BDW1T3G , SBC847BLT1G , SBC847BPDW1T1G , SBC847BPDW1T3G , SBC847BPDXV6T1G , SBC847BWT1G , SBC847CDW1T1G .

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