All Transistors. SBP5027R Datasheet

 

SBP5027R Datasheet, Equivalent, Cross Reference Search


   Type Designator: SBP5027R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO220

 SBP5027R Transistor Equivalent Substitute - Cross-Reference Search

   

SBP5027R Datasheet (PDF)

 ..1. Size:474K  winsemi
 sbp5027r.pdf

SBP5027R SBP5027R

SBP5027-RSBP5027-RSBP5027-RSBP5027-RHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionGener

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top