SBP5027R Datasheet, Equivalent, Cross Reference Search
Type Designator: SBP5027R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO220
SBP5027R Transistor Equivalent Substitute - Cross-Reference Search
SBP5027R Datasheet (PDF)
sbp5027r.pdf
SBP5027-RSBP5027-RSBP5027-RSBP5027-RHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionGener
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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