SBP5027R Specs and Replacement

Type Designator: SBP5027R

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1100 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO220

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SBP5027R datasheet

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SBP5027R

SBP5027-R SBP5027-R SBP5027-R SBP5027-R High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description Gener... See More ⇒

Detailed specifications: SDTC144EET1G, SHN1B01FDW1T1G, SJ5438, SJT1941PPN, SJT5198NPN, SBP13009K, SBP13009O, SBP13009S, 2N5401, SBP5305DO, SBP5307DO, SF127A, SF127B, SF127C, SF127D, SF127E, SF127F

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