2N741A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N741A
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO18
2N741A Transistor Equivalent Substitute - Cross-Reference Search
2N741A Datasheet (PDF)
jansr2n7411.pdf
JANSR2N7411Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 2.5A, -100V, rDS(ON) = 1.30 The Discrete Products Operation of Intersil Corporationhasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si
jansr2n7410.pdf
JANSR2N7410Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard,March 1998 N-Channel Power MOSFETFeatures Description 3.5A, 100V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
