MPSW51G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MPSW51G Specs and Replacement

Type Designator: MPSW51G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

MPSW51G Substitution

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MPSW51G datasheet

..1. Size:103K onsemi

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MPSW51, MPSW51A One Watt High Current Transistors PNP Silicon Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 1 MPSW51 -30 EMITTER MPSW51A -40 Collector-Base Voltage VCBO Vdc MPSW51 -40 MPSW51A -50 Emitter-Base Voltage VEBO -5.0 Vdc Collector Curre... See More ⇒

8.1. Size:123K motorola

mpsw51re.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW51/D One Watt High Current Transistors PNP Silicon MPSW51 COLLECTOR 3 MPSW51A* *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage MPSW51 VCEO 30 Vdc 1 2 MPSW51A 40 3 Collector Base Voltage MPSW51 VCBO 40 Vdc CASE 29 05, STYLE 1 MPSW51A... See More ⇒

8.2. Size:103K onsemi

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