MRF329 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF329
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 270 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: 333-04
MRF329 Transistor Equivalent Substitute - Cross-Reference Search
MRF329 Datasheet (PDF)
mrf329.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF329/DThe RF LineNPN SiliconMRF329RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts100 W, 100 to 500 MHzMinimum Gain = 7.0 dBCONTROLLED Q
mrf329re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF329/DThe RF LineNPN SiliconMRF329RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts100 W, 100 to 500 MHzMinimum Gain = 7.0 dBCONTROLLED Q
mrf323re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF323/DThe RF LineNPN SiliconMRF323RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in the 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VOutput Power = 20 Watts20 W, 400 MHzPower Gain = 10 dB MinRF POWEREfficiency = 50% M
mrf321.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF321/DThe RF LineNPN SiliconMRF321RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VdcOutput Power = 10 Watts10 W, 400 MHzPower Gain = 12 dB MinRF POWEREfficiency = 50% Min
mrf327.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz
mrf325re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF325/DThe RF LineNPN SiliconMRF325RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts30 W, 225 to 400 MHzMinimum Gain = 8.5 dBCONTROLLED QE
mrf326re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF326/DThe RF LineNPN SiliconMRF326RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 40 Watts40 W, 225 to 400 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF P
mrf321re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF321/DThe RF LineNPN SiliconMRF321RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VdcOutput Power = 10 Watts10 W, 400 MHzPower Gain = 12 dB MinRF POWEREfficiency = 50% Min
mrf327re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz
mrf327rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz
mrf326.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF326/DThe RF LineNPN SiliconMRF326RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 40 Watts40 W, 225 to 400 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF P
mrf325.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF325/DThe RF LineNPN SiliconMRF325RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts30 W, 225 to 400 MHzMinimum Gain = 8.5 dBCONTROLLED QE
mrf323.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF323/DThe RF LineNPN SiliconMRF323RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in the 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VOutput Power = 20 Watts20 W, 400 MHzPower Gain = 10 dB MinRF POWEREfficiency = 50% M
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
