All Transistors. MRF492A Datasheet

 

MRF492A Datasheet and Replacement


   Type Designator: MRF492A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 275 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SOT122
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MRF492A Datasheet (PDF)

 ..1. Size:86K  njs
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MRF492A

 8.1. Size:84K  motorola
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MRF492A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF492/DThe RF LineNPN SiliconMRF492RF Power TransistorDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W70 W, 50 MHzMinimum Gain = 11 dBRF POWEREfficiency = 50%TRANSI

 8.2. Size:84K  motorola
 mrf492.pdf pdf_icon

MRF492A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF492/DThe RF LineNPN SiliconMRF492RF Power TransistorDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W70 W, 50 MHzMinimum Gain = 11 dBRF POWEREfficiency = 50%TRANSI

 8.3. Size:220K  hgsemi
 mrf492.pdf pdf_icon

MRF492A

HG RF POWER TRANSISTORMRF492SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 WMinimum Gain = 11 dBEfficiency = 50% Load Mismatch Capability at High Line and RF OverdriveMAX

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Keywords - MRF492A transistor datasheet

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