MRF581 Datasheet. Specs and Replacement
Type Designator: MRF581 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO50
MRF581 Substitution
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MRF581 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE State of the Art Technology HIGH FREQUENCY Fine L... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH FREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON State of the Art Technology ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF581/D The RF Line MRF581 NPN Silicon MRF581A High-Frequency Transistors MRF5812, R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation Distortion IC = 200 mA High Gain LOW NOISE State of the Art Technology HIGH FREQUENCY Fine L... See More ⇒
Detailed specifications: MRF486, MRF492, MRF492A, MRF497, MRF544, MRF545, MRF555, MRF572, 2SC5200, MRF581A, MRF587, MRF630, MRF650, MRF652, MRF652S, MRF653, MRF654
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