All Transistors. MRF581A Datasheet

 

MRF581A Datasheet and Replacement


   Type Designator: MRF581A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1000 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO50
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MRF581A Datasheet (PDF)

 ..1. Size:222K  motorola
 mrf581 mrf581a mrf5812.pdf pdf_icon

MRF581A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L

 ..2. Size:93K  njs
 mrf581a.pdf pdf_icon

MRF581A

 8.1. Size:155K  motorola
 mrf5811lt1.pdf pdf_icon

MRF581A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology

 8.2. Size:222K  motorola
 mrf581re.pdf pdf_icon

MRF581A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L

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History: BD144 | EFT311 | 2SD1405GR | 3CK5323 | 2SD774 | 2SC5594 | KSD1273

Keywords - MRF581A transistor datasheet

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