MRF897R Datasheet, Equivalent, Cross Reference Search

   Type Designator: MRF897R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 105 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 960 MHz
   Collector Capacitance (Cc): 21 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: KT81

MRF897R Transistor Equivalent Substitute - Cross-Reference Search

MRF897R Datasheet (PDF)

..1. Size:172K motorola
mrf897r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF897R/DThe RF LineNPN SiliconMRF897RRF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, classAB linearamplifier applications in industrial and commercial FM/AM equipment operatingin the range 800970 MHz. Specified 24 Volt, 900 MHz Characteristics30 W, 900 MHzOutput Power = 30 W

..2. Size:107K njs
mrf897r.pdf

0.1. Size:172K motorola
mrf897rr.pdf

0.2. Size:151K motorola
mrf897re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF897/DThe RF LineNPN SiliconMRF897RF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, classAB linearamplifier applications in industrial and commercial FM/AM equipment operatingin the range 800970 MHz. Specified 24 Volt, 900 MHz Characteristics30 W, 900 MHzOutput Power = 30 Wat

8.1. Size:151K motorola
mrf897.pdf