All Transistors. MS1227 Datasheet

 

MS1227 Datasheet and Replacement


   Type Designator: MS1227
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 135 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SOT123

 MS1227 Transistor Equivalent Substitute - Cross-Reference Search

   

MS1227 Datasheet (PDF)

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MS1227

MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliabil... See More ⇒

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MS1227

HG RF POWER TRANSISTOR MS1226 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes ... See More ⇒

Datasheet: MRF891 , MRF891S , MRF894 , MRF897 , MRF897R , MRF899 , MRFC572 , MS1226 , D882 , MS1261 , MS1329 , MS1501 , MS1649 , MS2202 , MS2203 , MS2204 , MS8050-H .

History: UMG3N | UMG4N | NB022ET | 2SB766A

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