MS1227 Datasheet. Specs and Replacement
Type Designator: MS1227 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 135 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: SOT123
MS1227 Substitution
- BJT ⓘ Cross-Reference Search
MS1227 datasheet
MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliabil... See More ⇒
HG RF POWER TRANSISTOR MS1226 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes ... See More ⇒
Detailed specifications: MRF891, MRF891S, MRF894, MRF897, MRF897R, MRF899, MRFC572, MS1226, D882, MS1261, MS1329, MS1501, MS1649, MS2202, MS2203, MS2204, MS8050-H
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