MSG36E31 Datasheet and Replacement
Type Designator: MSG36E31
SMD Transistor Code: 7D
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.13 W
Maximum Collector-Base Voltage |Vcb|: 9 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 19000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SSSMINI6F1
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MSG36E31 Datasheet (PDF)
msg36e31.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).TransistorsMSG36E31SiGe HBT typeFor low-noise RF amplifierUnit: mm Features Compatible between high breakdown voltage and high cut-off frequency0.12+0.03 -0.026 5 4 Low noise, high-gain amplification Two elements incorporated into one package (Each transistor is separated) 0 to 0.02 Reduction
msg36c42.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MSG36C42SiGe HBT typeFor low-noise RF amplifier Features Package Compatible between high breakdown voltage and high cutoff frequency Code Low-noise, high-gain amplification SSSMini6-F1 Two elements incorporated into one package (Each transistor is separated) Pin Name SSSMini type package,
msg36d42.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors MSG36D42SiGe HBT typeFor low-noise RF amplifierUnit: mm0.12+0.03 Features-0.026 5 4 Compatible between high breakdown voltage and high cutoff frequency0 to 0.02 Low-noise, high-gain amplification Two elements incorporated into one package (Each
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KRA558U | 3CG110 | KTC3541T | 2SD681A | BFJ64 | U2T712 | CSB1426P
Keywords - MSG36E31 transistor datasheet
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History: KRA558U | 3CG110 | KTC3541T | 2SD681A | BFJ64 | U2T712 | CSB1426P



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