All Transistors. MT3S113P Datasheet

 

MT3S113P Datasheet and Replacement


   Type Designator: MT3S113P
   SMD Transistor Code: R7
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.6 W
   Maximum Collector-Emitter Voltage |Vce|: 5.3 V
   Maximum Emitter-Base Voltage |Veb|: 0.6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7700 MHz
   Collector Capacitance (Cc): 1.65 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: 2-5K1A
      - BJT Cross-Reference Search

   

MT3S113P Datasheet (PDF)

 ..1. Size:197K  toshiba
 mt3s113p.pdf pdf_icon

MT3S113P

MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz) High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC -JEITA SC-62Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-5K1A Weight : 0.05 g

 7.1. Size:201K  toshiba
 mt3s113.pdf pdf_icon

MT3S113P

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)

 7.2. Size:203K  toshiba
 mt3s113 .pdf pdf_icon

MT3S113P

MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base2. Emitter3. CollectorS-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25C)

 7.3. Size:176K  toshiba
 mt3s113tu.pdf pdf_icon

MT3S113P

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base2. 2. EmitterR 7 3. 3

SHOW MORE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KRA567U | UN621K | D11C1053 | CHDTA115TEGP | ZTX300 | BD544D | PN4274

Keywords - MT3S113P transistor datasheet

 MT3S113P cross reference
 MT3S113P equivalent finder
 MT3S113P lookup
 MT3S113P substitution
 MT3S113P replacement

 

 
Back to Top

 


 
.