All Transistors. MT4S102U Datasheet

 

MT4S102U Datasheet and Replacement


   Type Designator: MT4S102U
   SMD Transistor Code: P8
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.06 W
   Maximum Collector-Base Voltage |Vcb|: 6 V
   Maximum Collector-Emitter Voltage |Vce|: 3 V
   Maximum Emitter-Base Voltage |Veb|: 1.2 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 24000 MHz
   Collector Capacitance (Cc): 0.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT343
 

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MT4S102U Datasheet (PDF)

 ..1. Size:91K  toshiba
 mt4s102u.pdf pdf_icon

MT4S102U

MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit: mm2.10.1 1.250.1 FEATURES Low Noise Figure :NF=0.58dB (@f=2GHz) High Gain:|S21e|2=15.0dB (@f=2GHz) Marking 4 3 P 8 1. COLLECTOR1 22. EMITTER3. BASE 4. EMITTER Absolute Maximum Ratings (Ta = 25C) USQCharacteristics S

 7.1. Size:107K  toshiba
 mt4s102t.pdf pdf_icon

MT4S102U

MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm1.20.05 FEATURES 0.90.05 Low Noise Figure :NF=0.58dB (@f=2GHz) High Gain:|S21e|2=16.0dB (@f=2GHz) Marking 4 3 P 8 1. Collector 1 2 2. Emitter 3. Base 4. Emitter Absolute Maximum Ratings (Ta = 25C) TESQ JEDEC -Cha

Datasheet: MT3S106FS , MT3S111 , MT3S111P , MT3S111TU , MT3S113 , MT3S113P , MT3S113TU , MT4S102T , D880 , MT4S300U , MT4S301U , MT6L03AE , MT6L04AE , MT6L71FS , MT6L76FS , MT6L77FS , MT6L78FS .

History: 2SC3410 | TS7988 | BFR69B | MT3S111TU | KSB811Y | 2SC5945 | CSA1015Y

Keywords - MT4S102U transistor datasheet

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