MT4S102U Datasheet. Specs and Replacement

Type Designator: MT4S102U  📄📄 

SMD Transistor Code: P8

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.06 W

Maximum Collector-Base Voltage |Vcb|: 6 V

Maximum Collector-Emitter Voltage |Vce|: 3 V

Maximum Emitter-Base Voltage |Veb|: 1.2 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 24000 MHz

Collector Capacitance (Cc): 0.4 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT343

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MT4S102U datasheet

 ..1. Size:91K  toshiba

 mt4s102u.pdf pdf_icon

MT4S102U

MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit mm 2.1 0.1 1.25 0.1 FEATURES Low Noise Figure NF=0.58dB (@f=2GHz) High Gain S21e 2=15.0dB (@f=2GHz) Marking 4 3 P 8 1. COLLECTOR 1 2 2. EMITTER 3. BASE 4. EMITTER Absolute Maximum Ratings (Ta = 25 C) USQ Characteristics S... See More ⇒

 7.1. Size:107K  toshiba

 mt4s102t.pdf pdf_icon

MT4S102U

MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit mm 1.2 0.05 FEATURES 0.9 0.05 Low Noise Figure NF=0.58dB (@f=2GHz) High Gain S21e 2=16.0dB (@f=2GHz) Marking 4 3 P 8 1. Collector 1 2 2. Emitter 3. Base 4. Emitter Absolute Maximum Ratings (Ta = 25 C) TESQ JEDEC - Cha... See More ⇒

Detailed specifications: MT3S106FS, MT3S111, MT3S111P, MT3S111TU, MT3S113, MT3S113P, MT3S113TU, MT4S102T, 2N4401, MT4S300U, MT4S301U, MT6L03AE, MT6L04AE, MT6L71FS, MT6L76FS, MT6L77FS, MT6L78FS

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