MT4S301U Datasheet, Equivalent, Cross Reference Search
Type Designator: MT4S301U
SMD Transistor Code: P4
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 6 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 23000 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT343
MT4S301U Transistor Equivalent Substitute - Cross-Reference Search
MT4S301U Datasheet (PDF)
mt4s301u.pdf
MT4S301U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301U Unit:mm UHF-SHF Low Noise Amplifier Application FEATURES Low Noise Figure :NF=0.57dB(Typ.) (@f=2GHz) High Gain :|S21e|2=18.1dB(Typ.) (@f=2GHz) 2 kV ESD robustness (HBM) due to integrated protection circuits Marking 4 3 1. Collector P 4 2. Emitter 3. Base 4. Emitter 1
mt4s300u.pdf
MT4S300U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300U Unit:mm UHF-SHF Low Noise Amplifier Application FEATURES Low Noise Figure :NF=0.55dB(Typ.) (@f=2GHz) High Gain :|S21e|2=16.9dB(Typ.) (@f=2GHz) 2 kV ESD robustness (HBM) due to integrated protection circuits Marking 4 3 1. Collector P 2. Emitter 3. Base 4. Emitter
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD1835T | 2N4258A | HBC856
