All Transistors. MT4S301U Datasheet

 

MT4S301U Datasheet and Replacement


   Type Designator: MT4S301U
   SMD Transistor Code: P4
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 6 V
   Maximum Collector-Emitter Voltage |Vce|: 4 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 23000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT343
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MT4S301U Datasheet (PDF)

 ..1. Size:268K  toshiba
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MT4S301U

MT4S301U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301U Unit:mm UHF-SHF Low Noise Amplifier Application FEATURES Low Noise Figure :NF=0.57dB(Typ.) (@f=2GHz) High Gain :|S21e|2=18.1dB(Typ.) (@f=2GHz) 2 kV ESD robustness (HBM) due to integrated protection circuits Marking 4 3 1. Collector P 4 2. Emitter 3. Base 4. Emitter 1

 8.1. Size:246K  toshiba
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MT4S301U

MT4S300U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300U Unit:mm UHF-SHF Low Noise Amplifier Application FEATURES Low Noise Figure :NF=0.55dB(Typ.) (@f=2GHz) High Gain :|S21e|2=16.9dB(Typ.) (@f=2GHz) 2 kV ESD robustness (HBM) due to integrated protection circuits Marking 4 3 1. Collector P 2. Emitter 3. Base 4. Emitter

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KT8107D2 | RT1P237U | RN1108ACT | UN9217R | 2N1056 | 2SC999A | ECG2306

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