MP4514 Datasheet, Equivalent, Cross Reference Search
Type Designator: MP4514
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: 2-32B1B
MP4514 Transistor Equivalent Substitute - Cross-Reference Search
MP4514 Datasheet (PDF)
mp4514.pdf
MP4514 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4514 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 5 W (Ta = 25C
mp4513.pdf
MP4513 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4513 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 5 W (Ta =
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC988
