MP4514 Datasheet, Equivalent, Cross Reference Search
Type Designator: MP4514
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: 2-32B1B
MP4514 Transistor Equivalent Substitute - Cross-Reference Search
MP4514 Datasheet (PDF)
1.1. mp4514.pdf 
Size:130K _update
MP4514 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4514 Industrial Applications High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Package with heat sink isolated to lead (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 5 W (Ta = 25°C
5.1. mp4513.pdf Size:136K _update
MP4513 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4513 Industrial Applications High Power Switching Applications. Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Package with heat sink isolated to lead (SIP 12 pin) • High collector power dissipation (4 devices operation) : P = 5 W (Ta =
Datasheet: MP4304 , MP4305 , MP4502 , MP4503 , MP4506 , MP4507 , MP4508 , MP4513 , 2N3904 , MP4T243 , MP4T3243 , MP4T6310 , MP4T6325 , MP4T6365 , MP4T645 , MP4T801 , MP4T802 .
