All Transistors. MPQ3467 Datasheet

 

MPQ3467 Datasheet and Replacement


   Type Designator: MPQ3467
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.65 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO116
 

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MPQ3467 Datasheet (PDF)

 ..1. Size:493K  central
 mpq3467.pdf pdf_icon

MPQ3467

Quad TransistorsTO-116 Case (14 Pin DIP)TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB hFE @ IC VCE (SAT ) @ IC Cob fT NF tOFF COMMENTS PIN Typ CONFIG.**(V) (V) (V) (nA) (V) (mA) (V) (mA) (pF) (MHz) (dB) (ns) MIN MIN MIN MAX MIN MAX MAX MIN MAX MPQ2222 NPN AMPL/SWITCH 60 40 5.0 50 50 30 300 0.40 150 8.0 200 - - - - 4X 2N2222

 0.1. Size:111K  motorola
 mmpq3467.pdf pdf_icon

MPQ3467

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMPQ3467/DQuad Memory DriverMMPQ3467Transistor1 16PNP SiliconMotorola Preferred Device2 153 144 135 126 117 108 916MAXIMUM RATINGS1Rating Symbol Value UnitCASE 751B05, STYLE 4CollectorEmitter Voltage VCEO 40 VdcSO16CollectorBase Voltage VCB 40 VdcEmitterBase Voltage V

 0.2. Size:143K  onsemi
 mmpq3467.pdf pdf_icon

MPQ3467

MMPQ3467Quad Memory DriverTransistorPNP SiliconMAXIMUM RATINGShttp://onsemi.comRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCB -40 VdcEmitter-Base Voltage VEB -5.0 Vdc 16Collector Current IC -1.0 Adc1ContinuousFourCASE 751B-05, STYLE 4Each Transistors SO-16Transistor Equal PowerPower Dissipation PD W1 16@ TA =

Datasheet: MP4T6325 , MP4T6365 , MP4T645 , MP4T801 , MP4T802 , MP4T856 , MP6301 , MP6901 , A1015 , MPQ3725 , MPQ3725A , MPQ3762 , MPQ3798 , MPQ3799 , MPQ6002 , MPQ6100A , MPQ6502 .

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