MPQ3467 Datasheet, Equivalent, Cross Reference Search
Type Designator: MPQ3467
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.65 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO116
MPQ3467 Transistor Equivalent Substitute - Cross-Reference Search
MPQ3467 Datasheet (PDF)
mpq3467.pdf
Quad TransistorsTO-116 Case (14 Pin DIP)TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB hFE @ IC VCE (SAT ) @ IC Cob fT NF tOFF COMMENTS PIN Typ CONFIG.**(V) (V) (V) (nA) (V) (mA) (V) (mA) (pF) (MHz) (dB) (ns) MIN MIN MIN MAX MIN MAX MAX MIN MAX MPQ2222 NPN AMPL/SWITCH 60 40 5.0 50 50 30 300 0.40 150 8.0 200 - - - - 4X 2N2222
mmpq3467.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMPQ3467/DQuad Memory DriverMMPQ3467Transistor1 16PNP SiliconMotorola Preferred Device2 153 144 135 126 117 108 916MAXIMUM RATINGS1Rating Symbol Value UnitCASE 751B05, STYLE 4CollectorEmitter Voltage VCEO 40 VdcSO16CollectorBase Voltage VCB 40 VdcEmitterBase Voltage V
mmpq3467.pdf
MMPQ3467Quad Memory DriverTransistorPNP SiliconMAXIMUM RATINGShttp://onsemi.comRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCB -40 VdcEmitter-Base Voltage VEB -5.0 Vdc 16Collector Current IC -1.0 Adc1ContinuousFourCASE 751B-05, STYLE 4Each Transistors SO-16Transistor Equal PowerPower Dissipation PD W1 16@ TA =
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BTC2059A3
