2N757A Specs and Replacement
Type Designator: 2N757A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO18
2N757A Substitution
- BJT ⓘ Cross-Reference Search
2N757A datasheet
JMnic Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(T... See More ⇒
Detailed specifications: 2N753, 2N753-46, 2N753-51, 2N754, 2N755, 2N756, 2N756A, 2N757, BC558, 2N758, 2N758A, 2N758B, 2N759, 2N759A, 2N759B, 2N76, 2N760
Keywords - 2N757A pdf specs
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