BD678AG Datasheet. Specs and Replacement
Type Designator: BD678AG 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO225
BD678AG Substitution
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BD678AG datasheet
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium-Power Silicon PNP Darlingtons http //onsemi.com This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary 4.0 AMP DARLINGTON general-purpose amplifier applications. POWER TRANSISTORS Features PNP SILICON High DC Current Gain - 45, 60, 80, 100 V... See More ⇒
bd677a bd679a bd681 bd678a bd680a bd682.pdf ![]()
BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epi... See More ⇒
bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf ![]()
BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 ... See More ⇒
bd676a bd678a bd680a bd682.pdf ![]()
BD676A/678A/680A/682 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD676A - 45 V BD678A - 60 V ... See More ⇒
Detailed specifications: BD441G, BD442G, BD675AG, BD675G, BD676AG, BD676G, BD677AG, BD677G, TIP31, BD678G, BD679AG, BD679G, BD680AG, BD680G, BD681A, BD681G, BD682A
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