BDS12N1B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDS12N1B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 43.75 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO276AA
BDS12N1B Transistor Equivalent Substitute - Cross-Reference Search
BDS12N1B Datasheet (PDF)
bds12n1b.pdf
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SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitt
bds12n1a.pdf
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SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitt
bds12ig.pdf
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BDS10IGBDS11IGSEMEBDS12IGLABMECHANICAL DATADimensions in mm(inches)SILICON NPN4.83 (0.190)5.08 (0.200)10.41 (0.410)EPITAXIAL BASE IN10.67 (0.420)0.89 (0.035)1.14 (0.045)TO257 METAL PACKAGE3.56 (0.140)Dia.3.81 (0.150)FEATURES1 2 3 HERMETIC TO257 ISOLATED METALPACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS0.64 (0.025)Dia.0.89 (0
bds12smd05.pdf
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BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL
bds12m2a.pdf
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SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A High Voltage Hermetic TO-257AB Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO E
bds12smd.pdf
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BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL
bds12.pdf
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isc Silicon NPN Power Transistor BDS12DESCRIPTIONHigh Voltage: V = 100V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose power.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .