BDS21SMD Datasheet, Equivalent, Cross Reference Search
Type Designator: BDS21SMD
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO276AB
BDS21SMD Transistor Equivalent Substitute - Cross-Reference Search
BDS21SMD Datasheet (PDF)
..1. Size:452K semelab
bds21smd.pdf
bds21smd.pdf
SILICON EPIBASE PNP DARLINGTON TRANSISTOR BDS21SMD High DC Current Gain Hermetic Ceramic Surface Mount Package Designed For General Purpose Amplifiers and Low Speed Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage -80V VCEO Collector Emitter Voltage -80V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
