BDV65BG Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

BDV65BG Datasheet. Specs and Replacement

Type Designator: BDV65BG 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO218

BDV65BG Substitution

- BJT ⓘ Cross-Reference Search

BDV65BG datasheet

..1. Size:116K onsemi

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BDV65B (NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. http //onsemi.com Features 10 AMPERE DARLINGTON High DC Current Gain - HFE = 1000 (min) @ 5 Adc COMPLEMENTARY SILICON Monolithic Construction with Built-in Base Emitter Shunt Resistors POWER TRANSISTORS These... See More ⇒

8.1. Size:110K motorola

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Order this document MOTOROLA by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP Complementary Silicon Plastic BDV64B Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applica- tions. DARLINGTONS High DC Current Gain 10 AMPERES HFE = 1000 (min.) @ 5 Adc COMPLEMENTARY Monolithi... See More ⇒

8.2. Size:219K inchange semiconductor

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isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION Collector Current -I = 12A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Complement to Type BDV64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applicati... See More ⇒

9.1. Size:170K mospec

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