All Transistors. BDV65BG Datasheet

 

BDV65BG Datasheet, Equivalent, Cross Reference Search

Type Designator: BDV65BG

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO218

BDV65BG Transistor Equivalent Substitute - Cross-Reference Search

 

BDV65BG Datasheet (PDF)

1.1. bdv65bg.pdf Size:116K _update

BDV65BG
BDV65BG

BDV65B (NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. http://onsemi.com Features 10 AMPERE DARLINGTON • High DC Current Gain - HFE = 1000 (min) @ 5 Adc COMPLEMENTARY SILICON • Monolithic Construction with Built-in Base Emitter Shunt Resistors POWER TRANSISTORS • These

4.1. bdv64b bdv65b.pdf Size:110K _motorola

BDV65BG
BDV65BG

Order this document MOTOROLA by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP Complementary Silicon Plastic BDV64B Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applica- tions. DARLINGTONS High DC Current Gain 10 AMPERES HFE = 1000 (min.) @ 5 Adc IIIIIIIIIIIIIIIIIIIIIII COMPLEMENTARY Monolithic Construction with Builtin B

5.1. bdv64 bdv65.pdf Size:170K _mospec

BDV65BG
BDV65BG

A A A A

5.2. bdv65 a b c.pdf Size:279K _inchange_semiconductor

BDV65BG
BDV65BG

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDV65/A/B/C DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type BDV64/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?)

5.3. bdv65 65a 65b 65c.pdf Size:122K _inchange_semiconductor

BDV65BG
BDV65BG

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type BDV64/64A/64B/64C Ў¤ DARLINGTON Ў¤ High DC current gain APPLICATIONS Ў¤ For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV65/65A/65B/65C Fig.1 simplified outlin

Datasheet: BDS29AN2 , BDS29ASMD , BDS29BM3A , BDS29BN2 , BDS29CM3A , BDS29CN2 , BDS29CSMD , BDV64BG , MJE13003 , BDW24B , BDW42G , BDW46G , BDW47G , BDW52B , BDX14A , BDX14S , BDX16A .

 


BDV65BG
  BDV65BG
  BDV65BG
 

social 

LIST

Last Update

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |