BDY60-02 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY60-02
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 5 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO204
BDY60-02 Transistor Equivalent Substitute - Cross-Reference Search
BDY60-02 Datasheet (PDF)
bdy60-02.pdf
BDY60/02Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
bdy60.pdf
isc Silicon NPN Power Transistor BDY60DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
