BDY60-02 Datasheet. Specs and Replacement

Type Designator: BDY60-02  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 5 A

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO204

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BDY60-02 datasheet

 ..1. Size:11K  semelab

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BDY60-02

BDY60/02 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

 9.1. Size:201K  inchange semiconductor

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BDY60-02

isc Silicon NPN Power Transistor BDY60 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

Detailed specifications: BDX54BG, BDX54CG, BDX67CECC, BDY27AS, BDY27CX, BDY55X, BDY58A, BDY58S, 8050, BDY71X, BDY76E, BDY90S, BFU520, BFU520A, BFU520W, BFU520X, BFU520XR

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