BFU520W
Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU520W
SMD Transistor Code: ZA*
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45
W
Maximum Collector-Base Voltage |Vcb|: 24
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 2
V
Maximum Collector Current |Ic max|: 0.005
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 10000
MHz
Collector Capacitance (Cc): 0.55
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
SOT323
BFU520W
Transistor Equivalent Substitute - Cross-Reference Search
BFU520W
Datasheet (PDF)
..1. Size:296K nxp
bfu520w.pdf 
BFU520WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU520W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.1. Size:329K philips
bfu520.pdf
BFU520NPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.2. Size:325K philips
bfu520x.pdf
BFU520XNPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.3. Size:332K philips
bfu520xr.pdf
BFU520XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
8.4. Size:304K nxp
bfu520.pdf
BFU520NPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.5. Size:320K nxp
bfu520y.pdf
BFU520YDual NPN wideband silicon RF transistorRev. 1 20 February 2014 Product data sheet1. Product profile1.1 General descriptionDual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.6. Size:293K nxp
bfu520a.pdf
BFU520ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.7. Size:308K nxp
bfu520xr.pdf
BFU520XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
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