BFU530XR
Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU530XR
SMD Transistor Code: *TK
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45
W
Maximum Collector-Base Voltage |Vcb|: 24
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 2
V
Maximum Collector Current |Ic max|: 0.01
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 11000
MHz
Collector Capacitance (Cc): 0.36
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
SOT143R
BFU530XR
Transistor Equivalent Substitute - Cross-Reference Search
BFU530XR
Datasheet (PDF)
..1. Size:335K philips
bfu530xr.pdf 
BFU530XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
..2. Size:310K nxp
bfu530xr.pdf
BFU530XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
7.1. Size:325K philips
bfu530x.pdf
BFU530XNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.1. Size:328K philips
bfu530.pdf
BFU530NPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.2. Size:297K nxp
bfu530a.pdf
BFU530ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.3. Size:296K nxp
bfu530w.pdf
BFU530WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU530W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
Datasheet: 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
