BFU580Q
Datasheet, Equivalent, Cross Reference Search
Type Designator: BFU580Q
SMD Transistor Code: S58
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 24
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 2
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 11000
MHz
Collector Capacitance (Cc): 1.1
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
SOT89
BFU580Q
Transistor Equivalent Substitute - Cross-Reference Search
BFU580Q
Datasheet (PDF)
..1. Size:294K nxp
bfu580q.pdf
BFU580QNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefi
..2. Size:255K inchange semiconductor
bfu580q.pdf
isc Silicon NPN RF Transistor BFU580QDESCRIPTIONLow Noise Figuref = 8.5GHz TYP. @I = 30mA ; V = 8V; f= 900MHzT C CEHigh GainS 2 =13dB TYP. @I = 30mA ; V = 8V; f= 900MHz21 C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.ABSOLU
8.1. Size:317K nxp
bfu580g.pdf
BFU580GNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benef
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