BFU590Q Datasheet. Specs and Replacement
Type Designator: BFU590Q 📄📄
SMD Transistor Code: S59
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 24 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT89
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BFU590Q datasheet
BFU590Q NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefi... See More ⇒
BFU590G NPN wideband silicon RF transistor Rev. 1 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benef... See More ⇒
Detailed specifications: BFU550, BFU550A, BFU550W, BFU550X, BFU550XR, BFU580G, BFU580Q, BFU590G, NJW0281G, BFU730LX, BFU768F, BFU910F, BFW44CSM, BFW44DCSM, BFX34SMD, BFX34SMD05, BFX48DCSM
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BJT Parameters and How They Relate
History: PDTC144WT | 2SB681 | 2SD669-B | BFU910F | PEMB10 | 2SC2159
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