All Transistors. BFU590Q Datasheet

 

BFU590Q Datasheet and Replacement


   Type Designator: BFU590Q
   SMD Transistor Code: S59
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 24 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8000 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT89
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BFU590Q Datasheet (PDF)

 ..1. Size:254K  nxp
 bfu590q.pdf pdf_icon

BFU590Q

BFU590QNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefi

 8.1. Size:277K  nxp
 bfu590g.pdf pdf_icon

BFU590Q

BFU590GNPN wideband silicon RF transistorRev. 1 28 April 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benef

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2134 | DTA044TM | 2SD1764 | NSS1C301E | BDX28-16 | CI4 | 2SD2241

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