All Transistors. BFY90DCSM Datasheet

 

BFY90DCSM Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFY90DCSM
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.03 A
   Transition Frequency (ft): 1000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: LCC2

 BFY90DCSM Transistor Equivalent Substitute - Cross-Reference Search

   

BFY90DCSM Datasheet (PDF)

 ..1. Size:10K  semelab
bfy90dcsm.pdf

BFY90DCSM

BFY90DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 15V CEO6.22 0.13 A = 1.27 0.13I = 0.025A C(0.

 9.1. Size:140K  comset
bfy90-bfx89.pdf

BFY90DCSM BFY90DCSM

BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONSThe BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide

 9.2. Size:54K  semelab
smlbfy90.pdf

BFY90DCSM BFY90DCSM

SILICON PLANAR EPITAXIAL NPN Semelab LimitedTRANSISTORSMLBFY90 LOW NOISE TRANSISTOR FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)VCBO Collector - Base Voltage 30VVCER Collector - Emitter Voltage (RBE 50) 30VVCEO Collector - Emitter Voltage 15VVEBO Emitter - Base Voltage 2.5VIC(AV) Average

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top