All Transistors. BFY90DCSM Datasheet

 

BFY90DCSM Transistor. Datasheet pdf. Equivalent

Type Designator: BFY90DCSM

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.03 A

Transition Frequency (ft): 1000 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: LCC2

BFY90DCSM Transistor Equivalent Substitute - Cross-Reference Search

BFY90DCSM Datasheet (PDF)

1.1. bfy90dcsm.pdf Size:10K _update

BFY90DCSM

BFY90DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 15V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.025A C (0.

5.1. smlbfy90.pdf Size:54K _update

BFY90DCSM
BFY90DCSM

SILICON PLANAR EPITAXIAL NPN Semelab Limited TRANSISTOR SMLBFY90 • LOW NOISE TRANSISTOR • FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector - Base Voltage 30V VCER Collector - Emitter Voltage (RBE ≤ 50Ω) 30V VCEO Collector - Emitter Voltage 15V VEBO Emitter - Base Voltage 2.5V IC(AV) Average

5.2. bfy90-bfx89.pdf Size:140K _comset

BFY90DCSM
BFY90DCSM

BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-em

Datasheet: BFU730LX , BFU768F , BFU910F , BFW44CSM , BFW44DCSM , BFX34SMD , BFX34SMD05 , BFX48DCSM , BD679 , BLD128DD , BLV38 , BLV62 , BLV80 , BLV948 , BLV97CE , BLX65E , BLX65ES .

 


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