All Transistors. BR3DG227K Datasheet

 

BR3DG227K Datasheet, Equivalent, Cross Reference Search

Type Designator: BR3DG227K

SMD Transistor Code: BRD227

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

BR3DG227K Transistor Equivalent Substitute - Cross-Reference Search

 

BR3DG227K Datasheet (PDF)

1.1. br3dg227k.pdf Size:451K _update

BR3DG227K
BR3DG227K

KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 与 KSA642(BR3CG642K)互补,集电极耗散功率高。 Complement to KSA642(BR3CG642K),PC=400Mw. 用途 / Applications 用于低频放大。 Low frequency power amplifier. 内部等效电路

5.1. br3dg1684.pdf Size:309K _update

BR3DG227K
BR3DG227K

2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 共发射极直流电流放大系数大,饱和压降低。 High hFE, low VCE(sat). 用途 / Applications 用于一般放大。 General purpose amplifier. 内部等效电路 / Equivalent Circuit

5.2. br3dg536k.pdf Size:620K _update

BR3DG227K
BR3DG227K

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 高电流和宽阔的安全工作区。 Large current capacity and wide ASO 用途 / Applications 用于小信号一般放大电路。 Small signal general purpose amplifier appl

Datasheet: BR3DD13007X9P , BR3DD13009X7R , BR3DD13009X8F , BR3DD13009X9P , BR3DD13009Z8F , BR3DD5555R , BR3DD6802Q , BR3DG1684 , BD140 , BR3DG536K , BRF90G , BSV52LT1G , BSV62SMD , BSV62SMD05 , BSV64SMD , BSX20DCSM , BSX33CSM .

 


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