BR3DG227K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BR3DG227K  📄📄 

Código: BRD227

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO92

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BR3DG227K datasheet

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BR3DG227K

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BR3DG227K

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl

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BR3DG227K

2SC1684(BR3DG1684) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , High hFE, low VCE(sat). / Applications General purpose amplifier. / Equivalent Circuit

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