BSV52LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: BSV52LT1G
SMD Transistor Code: B2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT23
BSV52LT1G Transistor Equivalent Substitute - Cross-Reference Search
BSV52LT1G Datasheet (PDF)
bsv52lt1g.pdf
BSV52LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 12 VdcCollector-Base Voltage VCBO 20 Vdc2EMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max
bsv52lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSV52LT1/DSwitching TransistorBSV52LT1COLLECTORNPN Silicon31BASE23EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 12 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 20 VdcCollector Current Continuous IC 100 mAdcTHERMAL CHARACTER
bsv52lt1-d.pdf
BSV52LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 12 VdcCollector-Base Voltage VCBO 20 Vdc2EMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol
bsv52 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BSV52NPN switching transistor1999 Apr 15Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor BSV52FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 12 V).1 base2 emitterAPPLICATIONS3 collector High speed
bsv52 so2369 so2369a.pdf
BSV52SO2369/SO2369ASMALL SIGNAL NPN TRANSISTORSType MarkingBSV52 B2SO2369 N11SO2369A N81 SILICON EPITAXIAL PLANAR NPN2TRANSISTORS MINIATURE PLASTIC PACKAGE FOR3APPLICATION IN SURFACE MOUNTING1CIRCUITS LOW CURRENT, FAST SWITCHINGSOT-23APPLICATIONS.INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSO2369/A BSV52V Collector-Emi
bsv52.pdf
BSV52CESOT-23BMark: B2NPN Switching TransistorThis device is designed for high speed saturated switching atcollector currents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VVCES Collector-Base Voltage 20 VVEBO Emitter-Base Voltage 5.0 VIC Collector C
bsv52.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsv52.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .